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Research Paper

Modeling-Simulation and Analysis of MEMS Capacitive Millibar Pressure Sensor

[+] Author and Article Information
P. A. Manoharan1

Combat Vehicle Research and Development Establishment, DRDO, Chennai 600054, Indiapamanoharan@hotmail.com

D. Nedumaran

Department of CISL, University of Madras, Chennai 600025, Indiadnmaran@yahoo.com

1

Corresponding author.

J. Nanotechnol. Eng. Med 1(4), 041003 (Oct 21, 2010) (8 pages) doi:10.1115/1.4002320 History: Received July 14, 2010; Revised July 26, 2010; Published October 21, 2010; Online October 21, 2010

Design and simulation of MEMS based capacitive sensor with doubly supported serpentine meander structure for millibar pressure applications proposed in this work is analyzed using INTELLISUITE ™ and NISA ™ softwares. In this model, microsensing membrane (MSM) is simulated using gold, silicon, and platinum materials of 1μm and 2μm thickness. This model has the incorporation to study the sensitivity and spring constant of the support structures for different boundary conditions. The model is validated in terms of virtual force method and finite element method. The design performance of the model is analyzed for the MSM’s support structure stability, maximum permissible displacement limit, sensitivity, pull-in, hysteresis, and dynamic behavior for different pressure loads. Design consideration is taken care to avoid deformation of MSM for the application of pressure load. The spring constant and the effect of fringing field capacitance is evaluated to optimize the design. The key factors of design information for the fabrication of millibar pressure sensor are analyzed.

Copyright © 2010 by American Society of Mechanical Engineers
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References

Figures

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Figure 1

Proposed model for the fixed-fixed 1D membrane support structure: G-initial or the maximum distance between MSMs, gk-dynamic distance between electrodes, and V-dc voltage

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Figure 2

Proposed serpentine shaped spring structure model

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Figure 3

Equivalent vibration model of the serpentine structure

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Figure 4

Spring constant analysis of the serpentine model

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Figure 5

Spring constant analysis of the serpentine model for coarse and fine values of k using INTELLISUITE and NISA

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Figure 6

Model of the intermediate sections of the serpentine structure for spring constant analysis. (a) Simulation of the T1–T6 sections of the model for the spring constant k6 evaluated using Eq. 7. (b) Simulation of the T2–T6 sections of the model for the spring constant k5 evaluated using Eq. 8. (c) Simulation of the T4–T6 sections of the model for the spring constant k3 evaluated using Eq. 9. (d) Simulation of the T6 section of the model for the spring constant k1 evaluated using Eq. 10.

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Figure 7

Simulation of 1500 surface nodes on the MSM for spring constant versus displacement analysis

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Figure 8

Spring constant sensitivity analysis of the serpentine model

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Figure 9

Silicon serpentine model of 1 μm thickness simulated for pull-in voltage analysis

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Figure 10

Pull-in analyses of Au, Si, and Pt serpentine MSMs of 1 μm thickness

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Figure 11

Pull-in analyses of Au, Si, and Pt serpentine MSMs of 2 μm thickness

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Figure 12

Hysteresis analyses of MSM serpentine models for Au, Si, and Pt

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Figure 13

(a) Hysteresis analysis of Au serpentine structure, (b) hysteresis analysis of Si serpentine structure, and (c) hysteresis analysis of Pt serpentine structure

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Figure 14

MSM shown in 3D for the membrane dimensions

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Figure 15

Dynamic characteristics of the Si serpentine structure of thickness 1 μm for the pressure load of 0–100 mbars

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Figure 16

Dynamic response

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Figure 17

Dynamic characteristics of the Si serpentine structure of thickness 4 μm for the pressure load of 0–500 mbars

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