In the case of silicon, , , and . For the measurement of mechanical stress inside silicon, the Raman shift difference is measured, and then it is related to the stress components by Eqs. (7)–(11). In this research, the deformation of the silicon cantilever under constant load was investigated at 25 °C, 50 °C, and 100 °C, respectively. The compressive load at the holding stage was chosen to be 13 , 26 , and 39 . The corresponding compressive stress along the longitudinal direction of the cantilever was 50 , 100 , and 150 MPa. The mechanical loading and unloading rate were chosen to make the loading and unloading stages last for 10 s, respectively. The load was held at its maximum for 500 s to investigate the deformation at constant load. For each set of measurement, at least 10 repeated tests were performed in order to eliminate the effect of measurement error on physical quantities.