0
Research Papers

Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths

[+] Author and Article Information
Shereen M. Faraj

Department of Laser and
Optoelectronics Engineering,
Al-Nahrain University,
Baghdad 64074, Iraq

Shaimaa M. Abd Al-Baqi

Department of Laser and
Optoelectronics Engineering,
Al-Nahrain University,
Baghdad 64074, Iraq
e-mail: shaima_m3000@yahoo.com

Nasreen R. Jber

Department of Chemistry,
Al-Nahrain University,
Baghdad 64074, Iraq

Johnny Fisher

Alieus Solutions,
Northampton NN4 5DE, UK
e-mail: johnny.pfisher@gmail.com

Manuscript received December 2, 2014; final manuscript received May 25, 2015; published online July 27, 2015. Assoc. Editor: Roger Narayan.

J. Nanotechnol. Eng. Med 6(1), 011003 (Jul 27, 2015) (7 pages) Paper No: NANO-14-1071; doi: 10.1115/1.4030768 History: Received December 02, 2014

Porous silicon (PS) has become the focus of attention in upgrading silicon for optoelectronics. In this work, various structures were produced depending on the formation parameters by photo-electrochemical etching (PECE) process of n- and p-type silicon wafer at different time durations (5–90 mins) and different current densities (5, 15, and 20 mA/cm2) for each set of time durations. Diode lasers of 405 nm, 473 nm, and 532 nm wavelengths, each 50 mW power, were used to illuminate the surface of the samples during the etching process. The results showed that controlled porous layers were achieved by using blue laser, giving uniform structure which can make it possible to dispense with expensive methods of patterning the silicon.

FIGURES IN THIS ARTICLE
<>
Copyright © 2015 by ASME
Your Session has timed out. Please sign back in to continue.

References

Canham, L. T. , 1990, “Silicon Quantum Wire Array Fabricated by Electrochemical and Chemical Dissolution of Wafers,” Appl. Phys. Lett., 57(10), pp. 1046–1048. [CrossRef]
Lehmann, V. , 2002, Electrochemistry of Silicon: Instrumentation, Science, Materials and Applications, Wiley, New York.
Bisi, O. , Ossicini, S. , and Pavesi, L. , 2000, Porous Silicon: A Quantum Sponge Structure for Silicon Based Optoelectronics (Surface Science Reports), Elsevier Science B.V, Amsterdam, Vol. 38, pp. 1–126.
Sailor, M. J. , 2012, Porous Silicon in Practice: Preparation, Characterization and Applications, Wiley, New York.
Canham, L. , 1997, Properties of Porous Silicon, INSPEC, The Institution of Electrical Engineering, London.
Basu, S. , and Kanungo, J. , 2011, Nanocrystalline Porous Silicon, Crystalline Silicon—Properties and Uses, Intech, Rijeka, Croatia, pp. 219–250.
Kulathuraan, K. , Ramadas, V. , and Natarajan, B. , 2014, “Structural and Optical Properties of Nanostructured Porous Silicon for Ethanol Gas Sensing Application,” Int. J. Curr. Res., 6(1), pp. 4511–4515.
Koker, L. , and Kolasinski, K. W. , 2000, “Photo-Electrochemical Etching of Si and Porous Si in Aqueous HF,” Phys. Chem. Chem. Phys., 2, pp. 277–281. [CrossRef]
Lee, C.-W. , Kim, B.-S. , and Kim, D.-I. , 2001, “Photoluminescence From Nano Silicon Materials Prepared by Photo electrochemical Methods,” J. Korean Phys. Soc., 38(3), pp. 245–250.
Chamard, V. , Setzu, S. , and Romestain, R. , 2002, “Light Assisted Formation of Porous Silicon Investigated by X-Ray Diffraction and Reflectivity,” Appl. Surf. Sci., 191(1-4), pp. 319–327. [CrossRef]
Jakubowicz, J. , 2007, “Nanoporous Silicon Fabricated at Different Illumination and Electrochemical Conditions,” Superlattices Microstruct., 41, pp. 205–215. [CrossRef]
Kumar, R. , Mavi, H. S. , and Shukla, A. K. , 2008, “Macro and Micro-Surface Morphology Reconstructions During Laser-Induced Etching of Silicon,” Micron, 39(3), pp. 287–293. [CrossRef] [PubMed]
Mason, M. D. , Sirbuly, D. J. , and Buratto, S. K. , 2002, “Correlation Between Bulk Morphology and Luminescence in Porous Silicon Investigated by Pore Collapse Resulting From Drying,” Thin Solid Films, 406(1-2), pp. 151–158. [CrossRef]
Yaakob, S. , Bakar, M. A. , Ismai, J. , Bakar, N. H. H. A. , and Ibrahim, K. , 2012, “The Formation and Morphology of Highly Doped N-type Porous Silicon: Effect of Short Etching Time at High Current Density and Evidence of Simultaneous Chemical and Electrochemical Dissolutions,” J. Phys. Sci., 23(2), pp. 17–31.
Tynyshtykbaev, K. B. , Aitmukan, T. , Issova, A. T. , Rakhymetov, B. A. , Yeleuov, M. A. , and Tokmoldin, S. Zh. , 2013, “Self-Organizing Processes in Semiconductor Materials Science on the Example of Nanostructuring of por-Si,” Mater. Sci. Appl., 4(8A), pp. 1–11.

Figures

Grahic Jump Location
Fig. 1

(a) Schematic drawing of a conventional single-tank etching cell and (b) photograph of the Teflon etching cell

Grahic Jump Location
Fig. 2

I-V characteristic for (a) n-type and (b) p-type Silicon wafer immersed in 5% HF solution in darkness and under illumination of blue laser wavelength

Grahic Jump Location
Fig. 3

SEM images for PS samples prepared under irradiation of differ rent wavelengths (a) and (e) 405 nm, (b) magnification of (a), (c) and (f) 473 nm, (d) and (g) 532 nm

Grahic Jump Location
Fig. 4

SEM cross section for the PS samples illuminated by different laser wavelengths: (a) 405 nm, (b) 473 nm, and (c) 532 nm

Grahic Jump Location
Fig. 5

SEM images of top surface for PS layer etched for (a) 30 mins, (b) 40 mins, (c) 60 mins, (d) 80 mins, and (e) 90 mins

Grahic Jump Location
Fig. 6

SEM cross section images of PS layer etched for (a) 30 mins, (b) 40 mins, (c) 60 mins, (d) 80 mins, and (e) 90 mins

Grahic Jump Location
Fig. 7

SEM images for n-type (a) and p-type (b)

Grahic Jump Location
Fig. 8

SEM images for the surface and the cross section for n (111) PS (a) and (c) and n (100) PS (b) and (d)

Tables

Errata

Discussions

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging and repositioning the boxes below.

Related Journal Articles
Related eBook Content
Topic Collections

Sorry! You do not have access to this content. For assistance or to subscribe, please contact us:

  • TELEPHONE: 1-800-843-2763 (Toll-free in the USA)
  • EMAIL: asmedigitalcollection@asme.org
Sign In