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Research Papers

Single-Crystalline, Nanoporous Gallium Nitride Films With Fine Tuning of Pore Size for Stem Cell Engineering

[+] Author and Article Information
Lin Han

Biomedical Engineering,
Yale University,
Malone Center Room / space 103C,
55 Prospect Street,
New Haven, CT 06511
e-mail: han.lin@yale.edu

Jing Zhou

Anesthesiology,
Yale School of Medicine,
Biomedical Engineering,
Yale University, Room 314,
10 Amistad Street,
New Haven, CT 06510
e-mail: jzjzhou@gmail.com

Yubing Sun

Mechanical Engineering,
University of Michigan,
2664 GGB (George G. Brown Laboratory),
2350 Hayward,
Ann Arbor, MI 48109-2125
e-mail: ybsun@umich.edu

Yu Zhang

Electrical Engineering,
Yale University,
15 Prospect Street,
New Haven, CT 06511
e-mail: yuzhang18@gmail.com

Jung Han

Electrical Engineering,
Yale University, Becton 517,
15 Prospect Street,
New Haven, CT 06511
e-mail: jung.han@yale.edu

Jianping Fu

Mem. ASME
Mechanical Engineering,
Biomedical Engineering,
University of Michigan,
2664 GGB (George G. Brown Laboratory),
2350 Hayward,
Ann Arbor, MI 48109-2125
e-mail: jphu@umich.edu

Rong Fan

Biomedical Engineering,
Yale University, Malone 213,
55 Prospect Street,
New Haven, CT 06511
e-mail: rong.fan@yale.edu

1L. Han and J. Zhou contributed equally to this work.

Manuscript received February 2, 2015; final manuscript received March 17, 2015; published online June 24, 2015. Assoc. Editor: Donglei (Emma) Fan.

J. Nanotechnol. Eng. Med 5(4), 040903 (Nov 01, 2014) (9 pages) Paper No: NANO-15-1012; doi: 10.1115/1.4030615 History: Received February 02, 2015; Revised March 17, 2015; Online June 24, 2015

Single-crystalline nanoporous gallium nitride (GaN) thin films were fabricated with the pore size readily tunable in 20–100 nm. Uniform adhesion and spreading of human mesenchymal stem cells (hMSCs) seeded on these thin films peak on the surface with pore size of 30 nm. Substantial cell elongation emerges as pore size increases to ∼80 nm. The osteogenic differentiation of hMSCs occurs preferentially on the films with 30 nm sized nanopores, which is correlated with the optimum condition for cell spreading, which suggests that adhesion, spreading, and stem cell differentiation are interlinked and might be coregulated by nanotopography.

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Figures

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Fig. 1

SEM images of the top view (a)–(d) and the cross section (e)–(h) of nanoporous GaN films etched at 10 V, 15 V, 20 V, and 25 V. The scale bar is 500 nm.

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Fig. 2

Pore size distributions of GaN nanoporous films under different etching voltages: (a) 10 V, (b) 15 V, (c) 20 V, and (d) 25 V

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Fig. 3

The dependence of pore size (a) and porosity (b) on the etching voltages

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Fig. 4

TEM analysis of nanoporous GaN films. (a) The nanopores uniformly cover the surface of GaN film. (b) Higher magnification image shows the pore size is ∼20 nm (doping concentration = 5 × 1018cm−3 and etching voltage = 10 V). (c) Selected-area electron diffraction pattern (SAD) of the nanoporous GaN membrane shows the sixfold symmetry along the [0001] axis. The scale bar in (a) is 200 nm and (b) is 20 nm.

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Fig. 5

hMSCs adhesion and spreading on GaN films with and without nanopores. Immunofluorescent images of hMSCs on (a) plain GaN film, and GaN films with (b) 20 nm, (c) 30 nm, (d) 80 nm, and (e) 95 nm nanopores, after 4 hrs culture; on (f) plain GaN film, and GaN films with (g) 20 nm, (h) 30 nm, (i) 80 nm, and (j) 95 nm nanopores, after 24 hrs culture. The scale bar is 400 μm.

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Fig. 6

Quantify the morphology of hMSCs cultured on the plain and nanoporous GaN films with different pore sizes: the spreading area (a) and the elongation (b) of cells after 4 hrs culture; the spreading area (c) and the elongation (d) of cells after 24 hrs culture. * = significant at 5% level; ** = significant at 1% level.

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Fig. 7

(a) Brightfield images of hMSCs cultured in osteogenesis media on nanoporous GaN films for seven days and ALP was stained with fast blue RR salt. (b) Quantification of percentage of ALP+ cells cultured on naoporous GaN substrates. The scale bar is 100 μm.

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