Research Papers

Porous Silicon Morphology: Photo-Electrochemically Etched by Different Laser Wavelengths

[+] Author and Article Information
Shereen M. Faraj

Department of Laser and
Optoelectronics Engineering,
Al-Nahrain University,
Baghdad 64074, Iraq

Shaimaa M. Abd Al-Baqi

Department of Laser and
Optoelectronics Engineering,
Al-Nahrain University,
Baghdad 64074, Iraq
e-mail: shaima_m3000@yahoo.com

Nasreen R. Jber

Department of Chemistry,
Al-Nahrain University,
Baghdad 64074, Iraq

Johnny Fisher

Alieus Solutions,
Northampton NN4 5DE, UK
e-mail: johnny.pfisher@gmail.com

Manuscript received December 2, 2014; final manuscript received May 25, 2015; published online July 27, 2015. Assoc. Editor: Roger Narayan.

J. Nanotechnol. Eng. Med 6(1), 011003 (Jul 27, 2015) (7 pages) Paper No: NANO-14-1071; doi: 10.1115/1.4030768 History: Received December 02, 2014

Porous silicon (PS) has become the focus of attention in upgrading silicon for optoelectronics. In this work, various structures were produced depending on the formation parameters by photo-electrochemical etching (PECE) process of n- and p-type silicon wafer at different time durations (5–90 mins) and different current densities (5, 15, and 20 mA/cm2) for each set of time durations. Diode lasers of 405 nm, 473 nm, and 532 nm wavelengths, each 50 mW power, were used to illuminate the surface of the samples during the etching process. The results showed that controlled porous layers were achieved by using blue laser, giving uniform structure which can make it possible to dispense with expensive methods of patterning the silicon.

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Fig. 1

(a) Schematic drawing of a conventional single-tank etching cell and (b) photograph of the Teflon etching cell

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Fig. 2

I-V characteristic for (a) n-type and (b) p-type Silicon wafer immersed in 5% HF solution in darkness and under illumination of blue laser wavelength

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Fig. 3

SEM images for PS samples prepared under irradiation of differ rent wavelengths (a) and (e) 405 nm, (b) magnification of (a), (c) and (f) 473 nm, (d) and (g) 532 nm

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Fig. 4

SEM cross section for the PS samples illuminated by different laser wavelengths: (a) 405 nm, (b) 473 nm, and (c) 532 nm

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Fig. 5

SEM images of top surface for PS layer etched for (a) 30 mins, (b) 40 mins, (c) 60 mins, (d) 80 mins, and (e) 90 mins

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Fig. 6

SEM cross section images of PS layer etched for (a) 30 mins, (b) 40 mins, (c) 60 mins, (d) 80 mins, and (e) 90 mins

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Fig. 7

SEM images for n-type (a) and p-type (b)

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Fig. 8

SEM images for the surface and the cross section for n (111) PS (a) and (c) and n (100) PS (b) and (d)



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