The phonon thermal conductivity of Gallium nitride (GaN) nanofilms and nanowires under prestress fields are investigated theoretically. In the framework of elasticity theory, the phonon dispersion relations of spatially confined GaN nanostructures are achieved for different phonon modes. The acoustoelastic effects stemmed from the preexisting stresses are taken into account in simulating the phonon properties and thermal conductivity. Our theoretical results show that the prestress fields can alter the phonon properties such as the phonon dispersion relation and phonon group velocity dramatically, leading to the change of thermal conductivity in GaN nanostructures. The phonon thermal conductivity is able to be enhanced or reduced through controlling the directions of prestress fields operated on the GaN nanofilms and nanowires. In addition, the temperature and size-dependence of thermal conductivity of GaN nanostructures will be sensitive to the direction and strength of those prestress fields. This work will be helpful in controlling the phonon thermal conductivity based on the strain/stress engineering in GaN nanostructures-based electronic devices and systems.
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Research-Article
Influence of Prestress Fields on the Phonon Thermal Conductivity of GaN Nanostructures
Linli Zhu,
Linli Zhu
1
Department of Engineering Mechanics,
School of Aeronautics and Astronautics,
e-mail: llzhu@zju.edu.cn
School of Aeronautics and Astronautics,
Zhejiang University
,Hangzhou 310027
,Zhejiang
, China
e-mail: llzhu@zju.edu.cn
1Corresponding author.
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Haihui Ruan
Haihui Ruan
Department of Mechanical Engineering,
e-mail: haihui.ruan@polyu.edu.hk
The Hong Kong Polytechnic University
,Kowloon, Hong Kong
, China
e-mail: haihui.ruan@polyu.edu.hk
Search for other works by this author on:
Linli Zhu
Department of Engineering Mechanics,
School of Aeronautics and Astronautics,
e-mail: llzhu@zju.edu.cn
School of Aeronautics and Astronautics,
Zhejiang University
,Hangzhou 310027
,Zhejiang
, China
e-mail: llzhu@zju.edu.cn
Haihui Ruan
Department of Mechanical Engineering,
e-mail: haihui.ruan@polyu.edu.hk
The Hong Kong Polytechnic University
,Kowloon, Hong Kong
, China
e-mail: haihui.ruan@polyu.edu.hk
1Corresponding author.
Contributed by the Heat Transfer Division of ASME for publication in the JOURNAL OF HEAT TRANSFER. Manuscript received February 4, 2014; final manuscript received July 6, 2014; published online August 5, 2014. Assoc. Editor: Robert D. Tzou.
J. Heat Transfer. Oct 2014, 136(10): 102402 (7 pages)
Published Online: August 5, 2014
Article history
Received:
February 4, 2014
Revision Received:
July 6, 2014
Citation
Zhu, L., and Ruan, H. (August 5, 2014). "Influence of Prestress Fields on the Phonon Thermal Conductivity of GaN Nanostructures." ASME. J. Heat Transfer. October 2014; 136(10): 102402. https://doi.org/10.1115/1.4028023
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